X-ray diffraction determination of residual stresses in narrow copper interconnects with submicronic widths

Materials Science Forum

Volumn 347, Issue , 2000, Pages 562-567

  Sicardy, O ^a   Touet, I ^a   Arnaud, L ^b   Charlet, F ^b   Berger, T ^c  

^a CEA GRENOBLE   (France)

^b CEA LETI   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COPPER; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; ELASTICITY; GRAIN GROWTH; RESIDUAL STRESSES; STRAIN MEASUREMENT; TENSORS; THERMAL CYCLING; X RAY DIFFRACTION ANALYSIS;

COPPER INTERCONNECTS; DAMASCENE PROCESSES;

METALLIC FILMS;

EID: 0033666505     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.347-349.562     Document Type: Article

References (5)

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2. P. Borgesen et al., AppL Phys. Lett., Vol. 60 no14, 1706 (1992).
3. L. Arnaud et al., IEEE Proc of Int. Rel. Phys. Symp., 263 (1999).
4. J.F. Nye, Physical Properties of crystal, Clarendon Press, Oxford (1957).
5. F. Charlet et al., Proc of 5 workshop on stress-induced phenomena in metallization, Stuttgart, June 23-25 (1999).