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Volumn 16, Issue 12, 2000, Pages 877-880

Influence of the redeposition effect for focused ion beam 3D micromachining in silicon

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ETCHING; FOCUSING; ION BEAMS; MICROMACHINING; MILLING (MACHINING); NANOTECHNOLOGY; SILICON WAFERS;

EID: 0033658145     PISSN: 02683768     EISSN: None     Source Type: Journal    
DOI: 10.1007/s001700070005     Document Type: Article
Times cited : (43)

References (7)
  • 1
    • 0027576319 scopus 로고
    • Recent advances in application of focused ion beam technology
    • J. M. Lindquist, R. J. Young and M. C. Jaehnig, "Recent advances in application of focused ion beam technology". Microelectronic Engineering, 21, pp. 179-186, 1993.
    • (1993) Microelectronic Engineering , vol.21 , pp. 179-186
    • Lindquist, J.M.1    Young, R.J.2    Jaehnig, M.C.3
  • 2
    • 0029545690 scopus 로고    scopus 로고
    • Rapid fabrication of molds by mechanical micromilling: Process development
    • Craig Friedrich and Bharath Kikkeri, "Rapid fabrication of molds by mechanical micromilling: process development", SPIE. vol. 2640/161.
    • SPIE , vol.2640 , Issue.161
    • Friedrich, C.1    Kikkeri, B.2
  • 3
    • 0029251811 scopus 로고
    • Interconnection lines following the surface topography fabricated by writing focused ion beam implantation
    • L. Bischoff, J. Teichert and E. Hesse, "Interconnection lines following the surface topography fabricated by writing focused ion beam implantation". Microelectronic Engineering, 27, pp. 351-354, 1995.
    • (1995) Microelectronic Engineering , vol.27 , pp. 351-354
    • Bischoff, L.1    Teichert, J.2    Hesse, E.3
  • 4
    • 0029253901 scopus 로고
    • FIB repair of defects in rim and attenuated phase shift masks
    • Zheng Chui, Philip D. Prewett, John Watson and Brain Martin, "FIB repair of defects in rim and attenuated phase shift masks". Microelectronic Engineering, 27, pp. 331-334, 1995.
    • (1995) Microelectronic Engineering , vol.27 , pp. 331-334
    • Chui, Z.1    Prewett, P.D.2    Watson, J.3    Martin, B.4
  • 5
  • 7
    • 0010642534 scopus 로고    scopus 로고
    • Focused ion beam assisted chemically etched mesas on GaAs(001) and the nature of subsequent molecular beam epitaxial growth
    • 15 July
    • A. Kalburge, A. Konkar, T. R. Ramachandran, P. Chen and A. Madhukar, "Focused ion beam assisted chemically etched mesas on GaAs(001) and the nature of subsequent molecular beam epitaxial growth". Journal of Applied Physics 82(2), pp. 859-864, 15 July 1997.
    • (1997) Journal of Applied Physics , vol.82 , Issue.2 , pp. 859-864
    • Kalburge, A.1    Konkar, A.2    Ramachandran, T.R.3    Chen, P.4    Madhukar, A.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.