GaN-based MESFETs and DC-MOSFETs

Annual Device Research Conference Digest

Volumn , Issue , 2000, Pages 43-44

  Gaska, R ^a   Khan, M Asif ^a   Hu, X ^a   Simin, G ^a   Yang, J ^a   Deng, J ^a   Rumyantsev, S ^a   Shur, M S ^a  

^a SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; MATHEMATICAL MODELS; MESFET DEVICES; MOSFET DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICA; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

GALLIUM NITRIDE DIRECT CURRENT MOSFETS; GALLIUM NITRIDE MESFETS; SCHOTTKY GATE TURN-ON VOLTAGE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033652719     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (0)