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Journal of Solid State Chemistry

Volumn 153, Issue 1, 2000, Pages 124-131

Single crystal growth of the high pressure phase of (VO)2P2O7 at 3 GPA

(9) Saito, T a Terashima, T a Azuma, M a,b Takano, M a,b Goto, T c Ohta, H c Utsumi, W d Bordet, P e Johnston, D C f

a KYOTO UNIVERSITY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c KOBE UNIVERSITY (Japan)

d JAPAN ATOMIC ENERGY AGENCY (Japan)

e LABORATOIRE DE CRISTALLOGRAPHIE (France)

f IOWA STATE UNIVERSITY (United States)

Author keywords

ESR; High pressure synthesis; Magnetic susceptibility; S = 1 2 Heisenberg AF alternating exchange chain; Single crystal; Synchrotron XRD

Indexed keywords

OXYGEN DERIVATIVE; PHOSPHORUS DERIVATIVE; VANADIUM DERIVATIVE;

ARTICLE; COOLING; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRON SPIN RESONANCE; HIGH TEMPERATURE; MAGNETISM; MEASUREMENT; REACTION ANALYSIS; SYNCHROTRON; SYNTHESIS; X RAY DIFFRACTION;

EID: 0033647298 PISSN: 00224596 EISSN: None Source Type: Journal
DOI: 10.1006/jssc.2000.8761 Document Type: Article

Times cited : (43)

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