Improved implanted RESURF MOSFETS in 4H-SiC

Annual Device Research Conference Digest

Volumn , Issue , 2000, Pages 129-130

  Banerjee, S ^a   Chatty, K ^a   Chow, T P ^a   Gutmann, R J ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC FIELD MEASUREMENT; ION IMPLANTATION; NITROGEN; NUMERICAL METHODS; PHOSPHORUS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; THRESHOLD VOLTAGE;

BREAKDOWN VOLTAGE; DRAIN CURRENT; INVERSION LAYER MOBILITY; ON RESISTANCE;

MOSFET DEVICES;

EID: 0033645883     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (2)