Five-terminal amorphous silicon thin-film transistor structure

Annual Device Research Conference Digest

Volumn , Issue , 2000, Pages 59-60

  Martin, Sandrine ^a   Feillens, Yannick ^a   Kanicki, Jerzy ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRIC CONDUCTANCE; ELECTRIC FIELD EFFECTS; ELECTRONIC DENSITY OF STATES; ELECTRONIC PROPERTIES; OHMIC CONTACTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TERMINALS (ELECTRIC); THRESHOLD VOLTAGE;

CONDUCTION BAND; CONDUCTION CHANNEL INTRINSIC PROPERTIES; FIELD EFFECT MOBILITY; FRINGING EFFECT; INTRINSIC CONDUCTANCE; THIN FILM TRANSISTOR DESIGN;

THIN FILM TRANSISTORS;

EID: 0033645024     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (3)