Properties of GaAs/InGaAs quantum well solar cells under low concentration operation

Solar Energy Materials and Solar Cells

Volumn 60, Issue 1, 2000, Pages 19-26

  Yang, Ming Ju ^a   Yamaguchi, Masafumi ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ENERGY GAP; LIGHTING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

CONDUCTION BAND; MINORITY-CARRIER LIFETIME;

SOLAR CELLS;

EID: 0033640809     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(99)00055-0     Document Type: Article

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