Gain-switching of GaInN multiquantum well laser diodes

Electronics Letters

Volumn 36, Issue 1, 2000, Pages 83-84

  Marinelli, C ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

LASER PULSES; LIGHT EMISSION; SEMICONDUCTING GALLIUM COMPOUNDS;

GAIN SWITCHED PULSES;

QUANTUM WELL LASERS;

EID: 0033640352     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000130     Document Type: Article

References (4)

1. TAKEUCHI, T., DETCHPROHM, T., YANO, M., YAMAGUCHI, M., HAYASHI, N., IWAYA, M., ISOMURA, K., KIMURA, K., AMANO, H., AKASAKI, I., KANEKO, YW., WATANABE. S., YAMAOKA, Y., SHIODA, R., HIDAKA, T., KANEKO, YS., and YAMADA, N.: 'Fabrication and characterization of GaN-based laser diode grown on thick n-AlGaN contact layer'. ICNS3-Proc., Montpellier, France, 1999
2. WANG, S.Y., BLOOM, D.M., and COLLINS, D.M.: '20-GHz bandwidth GaAs photodiode', Appl. Phys. Lett., 1983, 42, (2), pp. 190-192
3. LIN, C., and BOWERS, J.E.: 'Measurement of 1.3 and 1.5mm gain-switched semiconductor laser pulses with picosecond IR streak camera and high speed InGaAs pin photodiode', Electron. Lett., 1985, 21, (25/26), pp. 1200-1202
4. VASIL'EV, P.: 'Ultrafast diode lasers. Fundamentals and applications' (Artech House Publishers, Boston-London, 1985), pp. 55-62 and references therein