Numerical simulation of the smooth quantum hydrodynamic model for semiconductor devices

Computer Methods in Applied Mechanics and Engineering

Volumn 181, Issue 4, 2000, Pages 393-401

  Gardner, Carl L ^a   Ringhofer, Christian ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Electron tunneling; Numerical simulations; Quantum hydrodynamic model; Semiconductor devices

Indexed keywords

COMPUTER SIMULATION; ELECTRON TUNNELING; HYDRODYNAMICS; POTENTIAL ENERGY; QUANTUM THEORY;

QUANTUM HYDRODYNAMIC (QHD) MODEL;

SEMICONDUCTOR DEVICE MODELS;

EID: 0033640179     PISSN: 00457825     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0045-7825(99)00180-2     Document Type: Article

References (15)

1. Gardner C.L., Ringhofer C. Smooth quantum potential for the hydrodynamic model. Physical Review. E 53:1996;157-167.
2. Gardner C.L., Ringhofer C. Approximation of thermal equilibrium for quantum gases with discontinuous potentials and application to semiconductor devices. SIAM Journal on Applied Mathematics. 58:1998;780-805.
3. Whitham G.B. Linear and Nonlinear Waves. 1974;Wiley, New York.
4. Grubin H.L., Kreskovsky J.P. Quantum moment balance equations and resonant tunnelling structures. Solid-State Electronics. 32:1989;1071-1075.
5. Gardner C.L. The quantum hydrodynamic model for semiconductor devices. SIAM Journal on Applied Mathematics. 54:1994;409-427.
6. Gardner C.L. Resonant tunneling in the quantum hydrodynamic model. VLSI Design. 3:1995;201-210.
7. Chen Z., Cockburn B., Gardner C.L., Jerome J.W. Quantum hydrodynamic simulation of hysteresis in the resonant tunneling diode. Journal of Computational Physics. 117:1995;274-280.
8. P. Pietra, C. Pohl, Weak limits of the quantum hydrodynamic model, VLSI Design to appear.
9. + diode IEEE Transactions on Electron Devices. 40:1993;455-457.
10. Grubin H.L., Govindan T.R., Kreskovsky J.P., Stroscio M.A. Transport via the Liouville equation and moments of quantum distribution functions. Solid-State Electronics. 36:1993;1697-1709.
11. C.L. Gardner, J.W. Jerome, C.W. Shu, The ENO method for the hydrodynamic model for semiconductor devices, in: High Performance Computing, 1993: Grand Challenges in Computer Simulation, The Society for Computer Simulation, San Diego, 1993, pp. 96-101.
12. E. Fatemi, C.L. Gardner, J.W. Jerome, S. Osher, D.J. Rose, Simulation of a steady-state electron shock wave in a submicron semiconductor device using high-order upwind methods, in: Computational Electronics: Semiconductor Transport and Device Simulation, Kluwer Academic Publishers, Boston, 1991, pp. 27-32.
13. Odeh F., Thomann E. On the well-posedness of the two-dimensional hydrodynamic model for semiconductor devices. Compel. 9:1990;45-47.
14. Bank R.E., Rose D.J. Global approximate Newton methods. Numerische Mathematik. 37:1981;279-295.
15. R.P. Feynman, Statistical Mechanics: A Set of Lectures, Benjamin Reading, MA, 1972.