Monolithic SiGe/Si quantum well sensor circuit for the 8-12μm band

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3630, Issue , 1999, Pages 90-97

  Robbins, David J ^a   Glasper, John L ^a   Anthony, Carl J ^a   Uren, Michael J ^a   Carline, Roger T ^a   Herbert, David C ^a   Leong, W Yee ^a  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; HEAT RADIATION; MONOLITHIC INTEGRATED CIRCUITS; PHOTOCONDUCTIVITY; PRESSURE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPURIOUS SIGNAL NOISE; TEMPERATURE;

LONG WAVELENGTH INFRARED; MONOLITHIC SENSOR CIRCUIT; OPTICAL TRANSITIONS; PHOTOCONDUCTIVE GAIN; PHOTORESPONSE; QUANTUM WELL INFRARED PHOTODETECTORS; RESPONSIVITY;

INFRARED DETECTORS;

EID: 0033608024     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.342779     Document Type: Conference Paper

References (11)