Mid-infrared absorption in self-assembled Ge quantum dots grown on Si substrate

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3630, Issue , 1999, Pages 98-103

  Wu, Wen Gang ^a   Liu, Jian Lin ^a   Tang, Yin Sheng ^a   Jin, Gao Long ^a   Wang, Kang L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; ELECTRON TRANSITIONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; RAMAN SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

INTRABAND TRANSITION; MID-INFRARED ABSORPTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033607959     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (27)