Electronic band structure of 3C-SIC from extended Huckel theory

Journal of Molecular Structure: THEOCHEM

Volumn 464, Issue 1-3, 1999, Pages 129-135

  Matos, Maria ^a  

^a PONTIFICAL CATHOLIC UNIVERSITY OF RIO DE JANEIRO   (Brazil)

Author keywords

Band structure; Extended Huckel theory; Silicon carbide

Indexed keywords

DIAMOND; SILICON; SILICON CARBIDE; SILICON DERIVATIVE; UNCLASSIFIED DRUG;

ANALYTIC METHOD; COMPARATIVE STUDY; CONFERENCE PAPER; CRYSTAL; CRYSTAL STRUCTURE; ELECTROCHEMISTRY; STRUCTURE ANALYSIS; THEORY;

EID: 0033580528     PISSN: 01661280     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0166-1280(98)00542-9     Document Type: Conference Paper

References (33)

1. H. Morkoç, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, M. Burns, J. Applied Physics, 76(3), 1994, p. 1363; in: CREE Research Inc., July, 1995.
2. H. Morkoç, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, M. Burns, J. Applied Physics, 76(3), 1994, p. 1363; in: CREE Research Inc., July, 1995.
3. Lambrecht W.R., Limpijumnong S., Rashkeev S.N., Segall B. Phys. Stat. Sol. (b). 202:1997;5.
4. Pensl G., Choyke W.J. Physica B. 185:1993;264.
5. Pollmann J., Krüger P., Sabisch M. Phys. Stat. Sol. (b). 202:1997;421.
6. Matsunami H. Physica B. 185:1993;65.
7. Chen J.S., Kolawa E., Nicolet M-A., Baud L., Jusseaud C., Madar R., Bernard C. J. Applied Physics. 75:(2):1994;897.
8. Chen J.S., Kolawa E., Nicolet M-A., Ruiz R.P., Baud L., Jusseaud C., Madar R. J. Applied Physics. 76:(4):1994;2169.
9. Geib K.M., Wilson C., Long R.G., Wilmsen C.W. J. Appl. Phys. 68:(6):1990;2796.
10. Waldrop J.R., Grant R.W. Appl. Phys. Lett. 62:(21):1993;2685.
11. Cohen M.L., Bergstresser T.K. Phys. Rev. 141:(2):1966;789.
12. Saslow W., Bergstresser T.K., Cohen M.L. Phys. Rev. Lett. 16:(9):1966;354.
13. Chelikowsky J.R., Cohen M.L. Phys. Rev. B. 14:(2):1976;556.
14. Chadi D.J., Cohen M.L. Phys. Stat. Sol. (b). 68:1975;405.
15. Vogl P., Halmarson H.P., Dow J.D. J. Phys. Chem. Sol. 44:(5):1983;365.
16. Messmer R.P. Chem. Phys. Lett. 11:(5):1971;589.
17. Calzaferri G., Rytz R. J. Phys. Chem. 100:1996;I1122.
18. R. Hoffmann, Rev. Mod. Phys., 60(3) 1988, p. 601; in: Solids and surfaces, VCH Publishers Inc. 1988.
19. R. Hoffmann, Rev. Mod. Phys., 60(3) 1988, p. 601; in: Solids and surfaces, VCH Publishers Inc. 1988.
20. Hoffmann R. J. Chem. Phys. 39:1963;1397.
21. U. Müller, Inorganic Structural Chemistry, Wiley, 1993.
22. J.K. Burdett, Chemical Bonding in Solids, Oxford University Press, 1995.
23. Trong Anh N., Elian M., Hoffmann R. J. Am.Chem. Soc. 100:1978;110.
24. For an introduction to pseudopotential method, see H. Ehrenreich, F. Seitz, D. Turnbull, (Eds.), Solid State Physics, 24, 1970; see articles by V. Heine, p. 1, M.L. Cohen, V. Heine, p. 38 and V. Heine, D., Weaire, p. 250.
25. For an introduction to pseudopotential method, see H. Ehrenreich, F. Seitz, D. Turnbull, (Eds.), Solid State Physics, 24, 1970; see articles by V. Heine, p. 1, M.L. Cohen, V. Heine, p. 38 and V. Heine, D., Weaire, p. 250.
26. For an introduction to pseudopotential method, see H. Ehrenreich, F. Seitz, D. Turnbull, (Eds.), Solid State Physics, 24, 1970; see articles by V. Heine, p. 1, M.L. Cohen, V. Heine, p. 38 and V. Heine, D., Weaire, p. 250.
27. For an introduction to pseudopotential method, see H. Ehrenreich, F. Seitz, D. Turnbull, (Eds.), Solid State Physics, 24, 1970; see articles by V. Heine, p. 1, M.L. Cohen, V. Heine, p. 38 and V. Heine, D., Weaire, p. 250.
28. Gavrilenko V.I., Frolov S.I., Klyui N.I. Physica B. 185:1993;394.
29. Matos M., Maffeo B. Solid State Commun. 48:(11):1983;961.
30. From dielectric quantum theory, in: J.A. Van Vechten, Phys. Rev., 187 1969, p. 1007.
31. Menéndez J. Phys. Rev. B. 38:(9):1988;6305.
32. Logothetidis S., Polatoglou H.M., Petalas J., Fuchs D., Johnson R.L. Physica B. 185:1993;389.
33. Burst D. Phys. Rev. 134:(5A):1964;1337.