Low temperature oxidation behavior of a MoSi2-based material

Materials Science and Engineering: A

Volumn 261, Issue 1-2, 1999, Pages 239-244

  Chen, Jiaxin ^a   Li, Changhai ^a   Fu, Zhi ^a   Tu, Xiaoyun ^a   Sundberg, M ^b   Pompe, R ^c  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b SE 734 27   (Sweden)

^c SWEDISH CERAMIC INSTITUTE   (Sweden)

Author keywords

Evaporation rate; Initial silica growth kinetics; Low temperature oxidation behavior; Microstructural evolution; Oxygen partial pressure dependence

Indexed keywords

COMPOSITE; MOLYBDENUM; OXIDATION; SILICON DIOXIDE;

EID: 0033559271     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5093(98)01071-5     Document Type: Article

References (10)

1. Yanagihara K., Przybylski K., Maruyama T. Oxid. Met. 47(3-4):1997;277-293.
2. Maruyama T., Yanagihara K. Mater. Sci. Eng., A. 240:1997;828-841.
3. Maruyama T. Materia. 35(10):1996;1108-1113.
4. Grabke H.J., Meier G.H. Oxid. Met. 44(1-2):1995;147-176.
5. Cook J., Khan A., Lee E., Mahapatra R. Mater. Sci. Eng., A. 155(1-2):1992;183-198.
6. Cook J., Mahapatra R., Lee E.W., Khan A., Waldman J. Ceram. Eng. Sci. Proc. 12:1991;1656-1670.
7. Berztiss D.A., Cerchiara R.R., Gulbransen E.A., Pettit F.S., Meier G.H. Mater. Sci. Eng., A. 155(1-2):1992;165-181.
8. Ban Z., Ogilvie R.E. Trans. Metall. Soc. AIME. 236(12):1966;1738-1742.
9. Azzam R.M.A., Bashara N.M. Ellipsometry and polarized light. 1977;North-Holland, Amsterdam.
10. Rigo S. Barbottin A. Instabilities in silicon devices, Silicon passivation and instabilities. 1:1986;North-Holland, Amsterdam.