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Volumn 61, Issue 1, 1999, Pages 1-5

Multi-structure ion sensitive field effect transistor with a metal light shield

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ION SENSITIVE FIELD EFFECT TRANSISTORS; PH EFFECTS; PHOTOSENSITIVITY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; SILICON NITRIDE;

EID: 0033554785     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(99)00036-2     Document Type: Article
Times cited : (14)

References (13)
  • 1
    • 0014698380 scopus 로고
    • Development of an ion sensitive solid-state device for neurophysiological measurements
    • Bergveld P. Development of an ion sensitive solid-state device for neurophysiological measurements. IEEE Trans. Biomed. Eng. BME17:1970;70-71.
    • (1970) IEEE Trans. Biomed. Eng. , vol.17 , pp. 70-71
    • Bergveld, P.1
  • 2
    • 0022443057 scopus 로고
    • A generalized theory of an electrolyte-insulator-semiconductor field effect transistor
    • Fung C.D., Cheung P.W., Ko W.H. A generalized theory of an electrolyte-insulator-semiconductor field effect transistor. IEEE Trans. Electron Devices. ED33(1):1986;8-18.
    • (1986) IEEE Trans. Electron Devices , vol.33 , Issue.1 , pp. 8-18
    • Fung, C.D.1    Cheung, P.W.2    Ko, W.H.3
  • 3
    • 0008499197 scopus 로고
    • Threshold voltage variations in n-channel MOS transistors and MOSFET-based sensors due to optical radiation
    • Wlodarski W., Bergveld P., Voorthuyzen J.A. Threshold voltage variations in n-channel MOS transistors and MOSFET-based sensors due to optical radiation. Sensors and Actuators. 9:1986;313-321.
    • (1986) Sensors and Actuators , vol.9 , pp. 313-321
    • Wlodarski, W.1    Bergveld, P.2    Voorthuyzen, J.A.3
  • 5
    • 0025258345 scopus 로고
    • Microstructure solid-state ion-sensitive membranes by thermal oxidation of Ta
    • Gimmel P., Schierbaum K.D.et al. Microstructure solid-state ion-sensitive membranes by thermal oxidation of Ta. Sensors and Actuators B. 1:1990;345-349.
    • (1990) Sensors and Actuators B , vol.1 , pp. 345-349
    • Gimmel, P.1    Schierbaum, K.D.2
  • 9
    • 85031580564 scopus 로고    scopus 로고
    • Study of amorphous tin oxide thin films for ISFET applications
    • accepted to be published in Sensors and Actuators B
    • H.-K. Liao, J.-C. Chou, W.-Y. Chung, T.-P. Sun, S.-K. Hsiung, Study of amorphous tin oxide thin films for ISFET applications, accepted to be published in Sensors and Actuators B, Chemical.
    • Chemical
    • Liao, H.-K.1    Chou, J.-C.2    Chung, W.-Y.3    Sun, T.-P.4    Hsiung, S.-K.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.