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Volumn 32, Issue 3, 1999, Pages 344-349

Thermal characterization of a double-gate silicon-on-insulator MOSFET

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; THERMAL EFFECTS; THERMODYNAMIC PROPERTIES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE; SILICON ON INSULATOR TECHNOLOGY; TWO DIMENSIONAL;

EID: 0033531291     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/3/023     Document Type: Article
Times cited : (8)

References (16)
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    • An analytical delayed-turn-on model for accumulation-type ultra-thin SOI PMOS devices operating at 77 K
    • Sim J H and Kuo J B 1994 An analytical delayed-turn-on model for accumulation-type ultra-thin SOI PMOS devices operating at 77 K Solid State Electron. 37 463-72
    • (1994) Solid State Electron. , vol.37 , pp. 463-472
    • Sim, J.H.1    Kuo, J.B.2
  • 4
    • 0029309696 scopus 로고
    • Analytical model and temperature dependence of the thin-film SOI FET
    • Scheinert S, Paasch G and Schipanski D 1995 Analytical model and temperature dependence of the thin-film SOI FET Solid State Electron. 38 949-59
    • (1995) Solid State Electron. , vol.3 , pp. 8949-8959
    • Scheinert, S.1    Paasch, G.2    Schipanski, D.3
  • 9
    • 0344726700 scopus 로고    scopus 로고
    • Influence of FMA (four moment approach) on the performance of a DG SOI MOSFET
    • submitted
    • Manoj K Pandey, Sujata Sena and Gupta R S 1998 Influence of FMA (four moment approach) on the performance of a DG SOI MOSFET Phys. Status Solidi a submitted
    • (1998) Phys. Status Solidi a
    • Pandey, M.K.1    Sena, S.2    Gupta, R.S.3
  • 13
    • 0020151660 scopus 로고    scopus 로고
    • Threshold voltage models for short, narrow and small geometry MOSFET's: A review
    • 982
    • Akers A and Sanchez J J 982 Threshold voltage models for short, narrow and small geometry MOSFET's: a review Solid State Electron. 25 621-41
    • Solid State Electron. , vol.25 , pp. 621-641
    • Akers, A.1    Sanchez, J.J.2
  • 14
    • 0018985376 scopus 로고
    • The effect of field dependent mobility on the threshold voltage of a small geometry MOSFET
    • Akers A 1989 The effect of field dependent mobility on the threshold voltage of a small geometry MOSFET Solid State Electron. 23 173-5
    • (1989) Solid State Electron. , vol.23 , pp. 173-175
    • Akers, A.1
  • 15
    • 0029271009 scopus 로고
    • Analysis and modeling of self-heating effects in thin-film SOI nMOSFETs as a function of temperature
    • Jomaah J, Ghibaudo G and Balestra F 1995 Analysis and modeling of self-heating effects in thin-film SOI nMOSFETs as a function of temperature Solid State Electron. 38 615-8
    • (1995) Solid State Electron. , vol.38 , pp. 615-618
    • Jomaah, J.1    Ghibaudo, G.2    Balestra, F.3
  • 16
    • 0029252469 scopus 로고
    • Low-temperature drain current characteristics in sub-10-nm-thick SOI nMOSFETs in SIMOX substrates Japan
    • Omura Y and Nagase M 1995 Low-temperature drain current characteristics in sub-10-nm-thick SOI nMOSFETs in SIMOX substrates Japan. J. Appl. Phys. 34 812-6
    • (1995) J. Appl. Phys. , vol.34 , pp. 812-816
    • Omura, Y.1    Nagase, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.