Photoluminescence of Cu+-doped silica glass prepared by MeV ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 149, Issue 1-2, 1999, Pages 77-80

  Fukumi, Kohei ^a   Chayahara, Akiyoshi ^a   Ohora, Kenji ^b   Kitamura, Naoyuki ^a   Horino, Yuji ^a   Fujii, Kanenaga ^a   Makihara, Masaki ^a   Hayakaya, Junji ^a   Ohno, Nobuhito ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

Author keywords

Copper; Ion implantation; Photoluminescence; Silica glass

Indexed keywords

COPPER; DOPING (ADDITIVES); ELECTRIC INSULATING MATERIALS; HEAT TREATMENT; ION IMPLANTATION; PHOTOLUMINESCENCE;

MONOVALENT IONS;

FUSED SILICA;

EID: 0033518353     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00729-0     Document Type: Article

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