Impact-parameter dependent stopping powers for MeV He ions in Si crystals

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 153, Issue 1-4, 1999, Pages 10-14

  Yamamoto, Y ^a   Ikeda, A ^a   Yoneda, T ^b   Kajiyama, K ^b   Kido, Y ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b Ion Eng Res Institute Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; CRYSTALS; IONS; VELOCITY;

IMPACT PARAMETER DEPENDENT STOPPING POWERS; SILICON CRYSTALS;

ELECTRON ENERGY LEVELS;

EID: 0033516119     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00982-3     Document Type: Article

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