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Volumn 153, Issue 1-4, 1999, Pages 36-41

Electronic energy loss of slow projectiles evaluated by molecular orbital theory

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BORON; ELECTRONIC PROPERTIES; IONS; LITHIUM; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; MOLECULAR STRUCTURE; PROBABILITY; TANTALUM;

EID: 0033516112     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00033-6     Document Type: Article
Times cited : (5)

References (15)
  • 12
    • 0003957801 scopus 로고    scopus 로고
    • Effect of Disorder and Defects in Ion-Implanted Semiconductor: Electrical and Physicochemical Characterization
    • chap. 3, Academic Press, San Diego
    • S.T. Nakagawa, Effect of Disorder and Defects in Ion-Implanted Semiconductor: Electrical and Physicochemical Characterization, chap. 3, Semiconductors and Semimetals, vol. 45, Academic Press, San Diego, 1997.
    • (1997) Semiconductors and Semimetals , vol.45
    • Nakagawa, S.T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.