Temperature distribution near the interface in sapphire crystals grown by EFG and GES methods

Journal of Crystal Growth

Volumn 198-199, Issue PART I, 1999, Pages 210-214

  Krymov, V M ^a   Kurlov, V N ^b   Antonov, P I ^a   Theodore, F ^c   Delepine, J ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^c CEA GRENOBLE   (France)

Author keywords

EFG Stepanov method; GES method; Sapphire; Shaped crystal growth

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTALLIZATION; HEAT RADIATION; PLASTIC DEFORMATION; TEMPERATURE DISTRIBUTION; TEMPERATURE MEASUREMENT; THERMAL STRESS; THERMOCOUPLES; TRANSPARENCY;

GROWTH FROM AN ELEMENT OF SHAPE (GES) METHOD; STEPANOV EDGE-DEFINED FILM-FED GROWTH (EFG) METHOD;

SAPPHIRE;

EID: 0033514624     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01129-4     Document Type: Article

References (6)

1. P.I. Antonov, S.I. Bakholdin, E.A. Tropp, V.S. Yuferev, J. Crystal Growth 50 (1980) 62.
2. A.L. Alishoev, L.M. Zatulovsky, Yu.K. Lingard, D.L. Shur, Bull. Acad. Sci. USSR Phys. Ser. 52 (1988) 99.
3. P.I. Antonov, S.I. Bakholdin, M.G. Vasilev, V.M. Krymov, A.V. Moskalev, V.S. Yuferev, Bull. Rus. Acad. Sci. Phys. 58 (1994) 72.
4. H.E. LaBelle, Mater. Res. Bull. 6 (1971) 581.
5. A.V. Stepanov, The Future of Metalworking, Lenizdat, Leningrad, 1963 (in Russian).
6. P.I. Antonov, Yu.G. Nosov, S.P. Nikanorov, Bull. Acad. Sci. USSR Phys. Ser. 49 (1985) 6.