Structural characterization of LPOMVPE grown AlAs/GaAs multilayers

Journal of Crystal Growth

Volumn 198-199, Issue pt 2, 1999, Pages 1070-1076

  Mogilyanski, D ^a   Blumin, M ^a   Gartstein, E ^a   Opitz, R ^b   Kohler, R ^b  

^a BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; EPITAXIAL GROWTH; METALLIC SUPERLATTICES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE PROPERTIES; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS; X RAY SCATTERING;

ALUMINUM ARSENIDE; CORRELATION LENGTH; DIFFUSE SCATTERING ANALYSIS; GRAZING INCIDENCE; THICKNESS;

MULTILAYERS;

EID: 0033514570     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01117-8     Document Type: Article

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