Partial strain relaxation in (In,Ga)As epilayers on GaAs by means of twin formation

Journal of Crystal Growth

Volumn 198-199, Issue pt 2, 1999, Pages 1146-1150

  Mizuno, K ^a,b   Mock P ^a,c   Tanner, B K ^a   Lacey, G ^d   Whitehouse, C R ^d   Smith, G W ^e   Keir, A M ^e  

^a DURHAM UNIVERSITY   (United Kingdom)

^b SHIMANE UNIVERSITY   (Japan)

^c UNIVERSITY OF OXFORD   (United Kingdom)

^d UNIVERSITY OF SHEFFIELD   (United Kingdom)

^e DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; STRESS RELAXATION; SYNCHROTRON RADIATION; TEMPERATURE DISTRIBUTION; TWINNING;

HETERO EPITAXIAL GROWTH; MONOCHROMATIC SYNCHROTRON X-RADIATION TOPOGRAPHY; PARTIAL STRAIN RELAXATION;

SEMICONDUCTOR GROWTH;

EID: 0033514560     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01155-5     Document Type: Article

References (14)

1. J.W. Matthews, A.E. Blakeslee, J. Crystal Growth 27 (1974) 118.
2. D.M. Hwang, S.A. Schwarz, T.S. Ravi, R. Bhat, C.Y. Chen, Phys. Rev. Lett. 66 (1991) 739.
3. G.S. Green, B.K. Tanner, S.J. Barnett, M. Emeny, A.D. Pitt, C.R. Whitehouse, G.F. Clark, Phil. Mag. 62 (1990) 131.
4. C.R. Whitehouse, A.G. Cullis, S.J. Barnett, B.F. Usher, G.F. Clark, A.M. Keir, B.K. Tanner, B. Lunn, J.C.H. Hogg, A.D. Johnson, G. Lacey, W. Spirkl, W.E. Hagston, J.H. Jefferson, J. Crystal Growth 150 (1995) 85.
5. S.J. Barnett, A.M. Keir, A.G. Cullis, A.D. Johnson, J. Jefferson, G.W. Smith, T. Martin, C.R. Whitehouse, G. Lacey, G.F. Clark, B.K. Tanner, W. Spirkl, B. Lunn, J.C.H. Hogg, P. Ashu, W.E. Hagston, C.M. Castelli, J. Phys. D 28 (1995) A17.
6. P. Möck, B.K. Tanner, G. Lacey, C.R. Whitehouse, G.W. Smith, Inst. Phys. Conf. Ser. 157 (1997) 165.
7. K. Mizuno, P. Möck, B.K. Tanner, G. Lacey, C.R. Whitehouse, G.W. Smith, A.M. Keir, Phys. Soc. Japan Meeting Abstr. 52 (1997) 107 (in Japanese).
8. G. Wagner, V. Gottschalch, R. Franzheld, S. Kriegel, P. Paufler, Phys. Stat. Sol. A 146 (1994) 371.
9. K. Fujiwara, K. Kanamoto, Y.N. Ohta, Y. Tokuda, T. Nakayama, J. Crystal Growth 80 (1987) 104.
10. Z. Liliental-Weber, H. Sohn, J. Washburn, Semicond. Semimet. 38 (1993) 397.
11. H. Fronius, A. Fischer, K. Ploog, J. Crystal Growth 81 (1987) 169.
12. X. Zhang, A.E. Staton-Bevan, Inst. Phys. Conf. Ser. 100 (1989) 211.
13. M. Bafleur, A. Munoz-Yague, A. Rocher, J. Crystal Growth 59 (1982) 531.
14. A.Y. Cho, J. Crystal Growth 111 (1991) 1.