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Volumn 198-199, Issue pt 2, 1999, Pages 1184-1189

Doping of CdTe with radioactive 111In during MOCVD growth

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; GAMMA RAYS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR DOPING;

EID: 0033514547     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01114-2     Document Type: Article
Times cited : (2)

References (10)
  • 1
    • 0344801822 scopus 로고    scopus 로고
    • C.A.J. Ammerlaan, B. Pajot (Eds.), Shallow-Level Centers in Semiconductors, World Scientific, Singapore
    • N. Magnea, Th. Baron, K. Saminadayar, in: C.A.J. Ammerlaan, B. Pajot (Eds.), IC-SLCS-7, Shallow-Level Centers in Semiconductors, World Scientific, Singapore, 1997, p. 93.
    • (1997) IC-SLCS-7 , pp. 93
    • Magnea, N.1    Baron, Th.2    Saminadayar, K.3
  • 6
    • 77956757441 scopus 로고    scopus 로고
    • C.A.J. Ammerlaan, B. Pajot (Eds.), Shallow-Level Centers in Semiconductors, World Scientific, Singapore
    • H. Wolf, T. Filz, J. Hamann, A. Jost, V. Ostheimer, Th. Wichert, in: C.A.J. Ammerlaan, B. Pajot (Eds.), IC-SLCS-7, Shallow-Level Centers in Semiconductors, World Scientific, Singapore, 1997, p. 123.
    • (1997) IC-SLCS-7 , pp. 123
    • Wolf, H.1    Filz, T.2    Hamann, J.3    Jost, A.4    Ostheimer, V.5    Wichert, Th.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.