Removal of vacancy type clusters by low energy ion generated self-interstitials in crystalline silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 289-293

  Fedorov, A V ^a   Van Veen, A ^a   Schut, H ^a   Rivera, A ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Cavities; Irradiation; Neon; Silicon

Indexed keywords

ANNEALING; COMPUTER SIMULATION; HELIUM; ION IMPLANTATION; MONTE CARLO METHODS; NANOSTRUCTURED MATERIALS; NEON; SINGLE CRYSTALS; SURFACE PROPERTIES;

LOW ENERGY ION GENERATED SELF-INTERSTITIALS; VACANCY CLUSTERS; VARIABLE ENERGY POSITRON ANNIHILATION (VEP);

SEMICONDUCTING SILICON;

EID: 0033513845     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00852-0     Document Type: Article

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