Spatiotemporal protein crystal growth studies using microfluidic silicon devices

Journal of Crystal Growth

Volumn 196, Issue 2-4, 1999, Pages 691-702

  Sanjoh, Akira ^a   Tsukihara, Tomitake ^b  

^a Adv Technol Research Laboratories   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Convection; Electrical double layer; Electrostatic interaction; Selective nucleation and growth; Si microfabrication technology

Indexed keywords

CRYSTALLIZATION; ELECTROLYTES; ELECTROSTATICS; NUCLEATION; PROTEINS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SUBSTRATES; SUPERSATURATION;

ELECTROSTATIC REPULSIVE FORCES; MICROFLUIDIC SILICON DEVICES;

CRYSTAL GROWTH;

EID: 0033513813     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00821-5     Document Type: Article

References (29)

1. A. McPherson, Preparation and Analysis of Protein Crystals, Wiley, New York, 1982.
2. R. Boistelle, J.P. Astier, J. Crystal Growth 90 (1988) 14.
3. W.M. Rosenblum, J.P. Kennedy, J. Crystal Growth 110 (1991) 171.
4. A. McPherson, P. Shlichta, J. Crystal Growth 90 (1988) 47.
5. E.I. Givargizov, M.O. Kliya, V.R. Melik-Adamyan, A.I. Grebenko, R.C. DeMattei, R.S. Feigelson, J. Crystal Growth 112 (1991) 758.
6. E.I. Givargizov, in: D.T.J. Hurle (Ed.), Handbook of Crystal Growth 3, Thin Film and Epitaxy, Part B: Growth Mechanics and Dynamics, Elsevier, Amsterdam, 1994, p. 957.
7. G. Nicolis, I. Prigogine, Self Organisation in Non-Equilibrium Systems, Wiley, New York, 1977.
8. M.C. Cross, P.C. Hohenberg, Rev. Mod. Phys. 65 (1993) 851.
9. P. Manneville, Dissipative Structures and Weak Turbulene, Academic Press, London, 1990.
10. G. Venzl, J. Ross, J. Chem. Phys. 77 (1982) 1302.
11. G. Venzl, J. Ross, J. Chem. Phys. 77 (1982) 1308.
12. S.C. Muller, G. Venzl, in: W. Jager (Ed.), Modeling of Patterns in Space and Time, Lecture Note in Biomathematics, Springer, Berlin, 1983.
13. S. Kai, in: P. Cladis, P. Palffy-Muhoray (Eds.), Spatiotemporal Patterns in Nonequilibrium Complex Systems, Addison-Wesley, New York, 1995.
14. F. Rosenberger, J. Crystal Growth 76 (1986) 618.
15. F. Rosenberger, Fundamentals of Crystal Growth I, Macroscopic Equilibrium Concepts, Springer, Berlin, 1979.
16. F. Rosenberger, G. Muller, J. Crystal Growth 65 (1983) 91.
17. J.N. Israelachvili, Intermolecular and Surface Forces With Application to Colloidal and Biological Systems, Academic Press, London, 1985, p. 174.
18. W.M. Siu, R.S.C. Cobbold, IEEE Trans. Electron Devices ED-26 (1979) 1805.
19. L. Bousse, N.F. De Rooij, P. Bergveld, IEEE Trans. Electron Devices ED-30 (1983) 1263.
20. L. Bousse, N.F. De Rooij, P. Bergveld, Surf. Sci. 135 (1983) 479.
21. C.D. Fung, P.W. Cheung, W.H. Ko, IEEE Trans. Electron Devices ED-33 (1986) 8.
22. D.L. Harame, L.J. Bousse, J.D. Shott, J.D. Meindl, IEEE Trans. Electron Devices ED-34 (1987) 1700.
23. R. Hogg, T.W. Healy, D.W. Fuerstenau, Trans. Faraday Soc. 62 (1966) 1638.
24. W.A. Tiller, J. Crystal Growth 76 (1986) 607.
25. C.C. Young, R.C. Demattei, R.S. Feigelson, W.A. Tiller, J. Crystal Growth 90 (1988) 79.
26. W. Monch, Semiconductor Surfaces and Interfaces, Springer, Berlin, 1995, p. 20.
27. S.M. Sze, Physics of Semiconductor Devices, Wiley, New York, 1981, p. 366.
28. C.J. Varker, J.D. Whitfield, P.L. Fejes, in: D.C. Gupta (Ed.), Silicon Processing, ASTM STP 804, American Society for Testing and Materials, 1983, p. 369.
29. S.M. Sze, VLSI Technology, McGraw-Hill, Singapore, 1983, p. 71.