AlN:TbF3 electroluminescence thin film prepared by radio-frequency magnetron sputtering

Chinese Physics Letters

Volumn 16, Issue 11, 1999, Pages 841-843

  Zhao, Yan Li ^a   Zhong, Guo Zhu ^a   Fan, Xi Wu ^a   Li, Chang Hua ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ELECTROLUMINESCENCE; FILM PREPARATION; III-V SEMICONDUCTORS; MAGNETRON SPUTTERING; TERBIUM COMPOUNDS;

AL-METAL; ALN THIN FILMS; HIGH PURITY AL; HIGH QUALITY; RADIO-FREQUENCY-MAGNETRON SPUTTERING; RF MAGNETRONS; SPUTTERING GAS; SUBSTRATES TEMPERATURE; TARGET MATERIALS; THIN-FILMS;

THIN FILMS;

EID: 0033485240     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/16/11/023     Document Type: Article

References (10)

1. P. Benalloul et al., Proceedings of International Workshop on Electroluminecence, Beijing, China, October 10-12, 1094 (Science Press, Beijing, 1994) p. 67.
2. H. Kobayashi and S. Tanaka, J. of the SID 4 (1996) 157.
3. N. A. Ivanov and K. I. Kirov, Thin Solid Film. 81 (1981) 201.
4. LU Zheng-qi, LI Zuo-yi, ZHENG Yuan-kai, MIAO Xiang-shui, HU Zuo-qi, LIN Geng-qi, LIU Wei-zhong, XIONG Rui and WANG Ke, Chin. Phys. Lett. 14 (1997) 131.
5. G. A. Wolff, I. Adams and J. W. Mellichamp, Phys. Rev. 114 (1959) 1262.
6. R. f. Rutz, Appl. Phys. Lett. 28 (1976) 379.
7. Hulya Demiryout, L. R. Thompson and G. J. Collins, Appl. Opt. 25 (1986) 1311.
8. ZHONG Guo-zhu, LI Chang-hua, MENG Li-jian and SONG Hang Proceedings of the Fourth International Workshop on Electroluminesence, Tottori, Japan, October 11-14, 1988 (Springer-Verlag, Berlin, Heidelberg, printed in the U.S.A. 1989) p. 153.
9. SUN Jia-ming, ZHONG Guo-zhu FAN Xi-wu and ZHENG Cheng-wei, Chin. J. Lumin. 17 (1996) 191.
10. P. Benalloul, Proceedings of the Fourth International Workshop on Electroluminesence, Tottori, Japan, October 11-14, 1988 (Springer-Verlag, Berlin, Heidelberg, printed in the U. S. A. 1989) p. 36.