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Volumn 5, Issue 2, 1999, Pages 449-455

The relaxation to the drift-diffusion system for the 3-Disentropic Euler-Poisson model for semiconductors

Author keywords

Drift diffusion; Euler Poisson system; Relaxation limit

Indexed keywords


EID: 0033481448     PISSN: 10780947     EISSN: None     Source Type: Journal    
DOI: 10.3934/dcds.1999.5.449     Document Type: Article
Times cited : (54)

References (10)
  • 1
    • 0022044296 scopus 로고
    • An investigation of steady-state velocity overshoot effects in Si and GaAs devices
    • G. Baccarani and M.R. Wordeman. An investigation of steady-state velocity overshoot effects in Si and GaAs devices. Solid State Electr., 28:407-416, 1985.
    • (1985) Solid State Electr. , vol.28 , pp. 407-416
    • Baccarani, G.1    Wordeman, M.R.2
  • 3
    • 0009288784 scopus 로고    scopus 로고
    • Relaxation of the isothermal Euler-Poisson system to the drift-diffusion equations
    • To appear
    • S. Junca and M. Rascle. Relaxation of the isothermal Euler-Poisson system to the drift-diffusion equations. Quart. Appl. Math. To appear.
    • Quart. Appl. Math.
    • Junca, S.1    Rascle, M.2
  • 5
    • 0000039797 scopus 로고
    • The one-dimensional Darcy's law as the limit of a compressible Euler flow
    • P. Marcati and A. Milani. The one-dimensional Darcy's law as the limit of a compressible Euler flow. J. Differential Equations, 13:129-147, 1990.
    • (1990) J. Differential Equations , vol.13 , pp. 129-147
    • Marcati, P.1    Milani, A.2
  • 6
    • 21844490167 scopus 로고
    • Weak solutions to a hydrodynamic model for semiconductors and relaxation to the drift-diffusion equation
    • P. Marcati and R. Natalini. Weak solutions to a hydrodynamic model for semiconductors and relaxation to the drift-diffusion equation. Arch. Rational Mech. Anal., 129:129-145, 1995.
    • (1995) Arch. Rational Mech. Anal. , vol.129 , pp. 129-145
    • Marcati, P.1    Natalini, R.2
  • 10
    • 84944483089 scopus 로고
    • Theory of flow of electrons and holes in germanium and other semiconductors
    • W.V. Van Roosbroeck. Theory of flow of electrons and holes in germanium and other semiconductors. Bell. Syst. Techn. J., 29:560-607, 1950.
    • (1950) Bell. Syst. Techn. J. , vol.29 , pp. 560-607
    • Van Roosbroeck, W.V.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.