Preparation and characterization of epitaxial CaSi2 and siloxene layers on silicon

Monatshefte fur Chemie

Volumn 130, Issue 1, 1999, Pages 79-87

  Vogg, Günther ^a   Zamanzadeh Hanebuth, Nikta ^a   Brandt, Martin S ^a   Stutzmann, Martin ^a   Albrecht, Martin ^b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Anisotropy of IR absorption; CaSi2 epitaxy; Diode structure; Structural analysis

Indexed keywords

EID: 0033479412     PISSN: 00269247     EISSN: None     Source Type: Journal    
DOI: 10.1007/PL00010177     Document Type: Article

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