Electron acceleration process in ZnS-type thin film electroluminescence devices

Chinese Physics Letters

Volumn 16, Issue 3, 1999, Pages 217-219

  Zhao, Hui ^a   Wang, Yong Sheng ^a   Xu, Zheng ^a   Xu, Xu Rong ^a  

^a BEIJING JIAOTONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION; ELECTROLUMINESCENCE; ELECTRON TRANSPORT PROPERTIES; II-VI SEMICONDUCTORS; INTERFACE STATES; KINETIC ENERGY; KINETICS; MONTE CARLO METHODS; THIN FILMS;

ACCELERATION PROCESS; ACCELERATION TIME; ELECTRON TRANSPORT; ELECTRONS ACCELERATION; EMISSION PROCESS; INTERFACES STATE; MONTECARLO METHODS; SCATTERING RATES; THIN-FILM ELECTRO-LUMINESCENT DEVICES; THIN-FILM ELECTROLUMINESCENCE DEVICES;

ZINC SULFIDE;

EID: 0033464153     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/16/3/022     Document Type: Article

References (11)

1. Y. A. Ono, Electroluminescent Displays (World Scientific, Singapore, 1995) p. 3; 23.
2. YANG Xiao-hui et al., Chin. Phys. Lett. 14 (1997) 946.
3. GU Jian-hua et al., Chin. Phys. Lett. 14 (1997) 141.
4. ZHANG Zhi-lin et al., Chin. Phys. Lett. 14 (1997) 302.
5. ZHANG Zhi-Peng et al., Chin. Phys. Lett. 15 (1998) 591.
6. E. Bringuier, Philos. Mag. B 75 (1997) 209.
7. C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation (Springer-Verlag, New York, 1989) p.104.
8. E. Bringuier, J. Appl. Phys. 66 (1989) 1314.
9. H. Sasakura, H. Kobayashi and S. Tanaka, J. Appl. Phys. 52 (1981) 6901.
10. K. Brennan, J. Appl. Phys. 64 (1988) 4024.
11. J. Fogarty, W. Kong and R. Solanki, Solid-State Electron. 38 (1995) 653.