A new annealing technique for semiconductor layers in Si MOS transistors

Journal of the Korean Physical Society

Volumn 34, Issue SUPPL. 3, 1999, Pages

  Noguchi, Takashi ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033459589     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

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