메뉴 건너뛰기




Volumn 17, Issue 2, 1999, Pages 453-457

Depth dependence of hydrogenation using electron cyclotron plasma in GaAs-on-Si solar cell structures

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0033448942     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581605     Document Type: Article
Times cited : (4)

References (19)
  • 11
    • 85034556172 scopus 로고    scopus 로고
    • SIMS measurements were performed at the Foundation for Promotion of Material Science and Technology of Japan, Tokyo
    • SIMS measurements were performed at the Foundation for Promotion of Material Science and Technology of Japan, Tokyo.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.