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Volumn 16, Issue 2, 1999, Pages 134-136
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Enhancement of electron mobility by an intense high-frequency irradiation in GaAs-based two-dimensional systems
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC FIELDS;
ELECTRON TRANSPORT PROPERTIES;
III-V SEMICONDUCTORS;
IRRADIATION;
QUANTUM CHEMISTRY;
SEMICONDUCTING GALLIUM;
TEMPERATURE;
TERAHERTZ WAVES;
ELECTROMAGNETIC IRRADIATION;
ELECTRON TRANSPORT;
FREQUENCY RANGES;
HIGH FREQUENCY HF;
INTENSE RADIATION FIELD;
LOWS-TEMPERATURES;
QUANTUM-WELLS;
STEADY-STATE RESPONSE;
TIME DEPENDENT;
TWO-DIMENSIONAL SYSTEMS;
GALLIUM ARSENIDE;
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EID: 0033445954
PISSN: 0256307X
EISSN: None
Source Type: Journal
DOI: 10.1088/0256-307X/16/2/021 Document Type: Article |
Times cited : (1)
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References (9)
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