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Volumn 16, Issue 2, 1999, Pages 134-136

Enhancement of electron mobility by an intense high-frequency irradiation in GaAs-based two-dimensional systems

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRON TRANSPORT PROPERTIES; III-V SEMICONDUCTORS; IRRADIATION; QUANTUM CHEMISTRY; SEMICONDUCTING GALLIUM; TEMPERATURE; TERAHERTZ WAVES;

EID: 0033445954     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/16/2/021     Document Type: Article
Times cited : (1)

References (9)
  • 6
    • 25544465989 scopus 로고
    • X. L. Lei and C. S. Ting, Phys. Rev. B 32 (1985) 1112; X. L. Lei, J. L. Birman and C. S. Ting, J. Appl. Phys. 58 (1985) 2270.
    • (1985) Phys. Rev. B , vol.32 , pp. 1112
    • Lei, X.L.1    Ting, C.S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.