Layer perfection in ultrathin MOVPE-grown InAs layers buried in GaAs(001) studied by X-ray standing waves and photoluminescence spectroscopy

Journal of Synchrotron Radiation

Volumn 6, Issue 3, 1999, Pages 500-502

  Gupta, James A ^a   Woicik, Joseph C ^b   Watkins, Simon P ^a   Harrison, Dale A ^a   Crozier, E Daryl ^a   Karlin, Barry A ^b  

^a SIMON FRASER UNIVERSITY   (Canada)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

InAs quantum wells; Photoluminescence spectroscopy; X Ray standing waves

Indexed keywords

EID: 0033434821     PISSN: 09090495     EISSN: None     Source Type: Journal    
DOI: 10.1107/S0909049598015581     Document Type: Article

References (8)

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