Influence of vacuum-annealing on the diffusion barrier properties of MOCVD TiN for Cu metallization

Journal of the Korean Physical Society

Volumn 35, Issue SUPPL. 2, 1999, Pages

  Lee, Jaegab ^a   Cho, Heunglyul ^a   Lee, Eungu ^b   Lee, Jeongyong ^c   Kim, Kibum ^d   Lee, Jongmu ^e  

^a Kookmin University   (South Korea)

^b Chosun University   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^d Seoul National University   (South Korea)

^e Inha University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033418539     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

1. M. Wittmer, Appl. Phys. Lett. 37, 540 (1980).
2. W. J. Garceau, P. R. Fournier and G. K. Herb, Thin Solid Films 60, 237 (1979).
3. K. Ohto, K. Ueno, K. Tsunenari, K. Numajiri, M. Okamura and H. Jinba, in Advanced Metallization for ULSI Applications in 1993, edited by P. Faureau, Y. Shacham-Diamand and Y. Horiike (Mater. Res, Soc., Pittsburgh, 1994), p. 151.
4. J. O. Olowolafe, C. J. Mogab, R. B. Gregory and M. Kottke, J. Appl. Phys. 72, 4099 (1992).
5. K. C. Park and K. B. Kim, J. Electrochem. 142, 3109 (1995).
6. T. S. Chang, W. C. Wang, L. P. Wang, J. C. Hwang and F. S. Huang, J. Appl. Phys. 75, 7847 (1994).
7. D. Y. Shih, C. A. Chang, J. Paraszczak, S. Nunes and J. Cataldo, J. Appl. Phys. 70, 3052 (1991).
8. J. G. Lee, J. H. Kim, H. K. Shin, S. J. Park, S. J. Yun and G. H. Kim, MRS Proceeding 427, 371 (1996).
9. D. H. Kim, S. L. Cho, K. B. Kim, J. J. Kim, J. W. Park and J. J. Kim, Appl. Phys. Lett, 69, 4182 (1996).
10. J. Crank, The Mathematics of Diffusion, 2nd ed. (Oxford University Press, London, 1978), p. 50.
11. M. B. Chamberlain, Thin Solid Films 91, 155 (1982).