Fabrication of 1.3 μm strained InGaAsP/InGaAsP MQW SSC-LD by selective area MOCVD growth

Journal of the Korean Physical Society

Volumn 34, Issue SUPPL. 3, 1999, Pages

  Kim, T J ^a   Ji, J K ^a   Keh, Y C ^a   Kim, H S ^a   Lee, S D ^a   Choo, A G ^a   Kim, T I ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033413622     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (3)

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2. G. Muller, B. Stegmuller, H. Westermeier and G. Wenger, Electron. Lett. 27, 1836 (1991).
3. R. N. Thurston, E. Kapon and A. Shahar, Opt. Lett. 16, 306 (1991).