Growth of amorphous SixC1-x thin films using a methane-silane high energy ion beam

Surface and Coatings Technology

Volumn 122, Issue 1, 1999, Pages 51-55

  Halac, E B ^a   Huck, H ^a   Oviedo, C ^b   Reinoso, M E ^a   De Benyacar, M A R ^a  

^a Instituto de Tecnologia   (Argentina)

^b Universidad Provincial del Sudoeste   (Argentina)

Author keywords

Amorphous silicon carbon films; Ion beam deposition; Thermal behavior

Indexed keywords

COMPOSITION EFFECTS; DEPOSITION; FILM GROWTH; GRAPHITIZATION; ION BEAMS; METHANE; MIXTURES; RAMAN SPECTROSCOPY; SILANES; SILICON CARBIDE; THERMODYNAMIC STABILITY; THIN FILMS;

ION BEAM DEPOSITION;

AMORPHOUS FILMS;

DIAMOND-LIKE CARBON; SILICON; THERMAL ANALYSIS;

EID: 0033368999     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(99)00410-7     Document Type: Article

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