Compensation of piezoresistivity effect in p-type implanted resistors

Electronics Letters

Volumn 35, Issue 18, 1999, Pages 1587-1588

  Fruett, F ^a   Meijer, G C M ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ELECTRIC RESISTANCE MEASUREMENT; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUITS; PIEZOELECTRICITY; STRESSES;

INTEGRATED RESISTORS; PIEZORESISTIVITY EFFECT; PIEZORESISTOR;

RESISTORS;

EID: 0033366167     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991049     Document Type: Article

References (4)

1. TUFTE, O.N., and STELZER, E.L.: 'Piezoresistive properties of silicon diffused layers', J. Appl. Phys., 1963, 34, (2), pp. 313-318
2. CREEMER, J.F., and FRENCH, P.J.: 'Reduction of uncertainty in the measurement of the piezoresistive coefficients of silicon with a three-element rosette'. SPIE Conf. on Smart Electronics and MEMS, 1998, Vol. 3328, pp. 392-402
3. SMITH, C.S.: 'Piezoresistance effect in germanium and silicon', Phys. Rev., 1954, 94, (1), pp. 42-49
4. MATSUDA, K., SUZUKI, K., YAMAMURA, K., and KANDA, Y.: 'Nonlinear piezoresistance effects in silicon', J. Appl. Phys., 1993, 73, (4), pp. 1838-1847