High-voltage lateral RESURF MOSFETs on 4H-SiC

Annual Device Research Conference Digest

Volumn , Issue , 1999, Pages 44-45

  Chatty, K ^a   Banerjee, S ^a   Chow, T P ^a   Gutmann, R J ^a   Hoshi, M ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RESISTANCE; ELECTRIC SPACE CHARGE; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE;

REDUCED SURFACE FIELD (RESURF) DEVICES;

MOSFET DEVICES;

EID: 0033365937     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)