Monolithic millimeter-wave balanced bi-phase amplitude modulator in GaAs/InGaP HBT technology

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 1999, Pages 243-246

  Nam, S ^a   Shala, N ^a   Ang, K S ^a   Ashtiani, A E ^a   Gokdemir, T ^a   Robertson, I D ^a   Marsh, S P ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; EQUIVALENT CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; MODULATORS; PHASE SHIFTERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; VARACTORS;

AMPLITUDE ERROR; BI-PHASE AMPLITUDE MODULATOR; PHASE ERROR;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0033365472     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)