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Volumn 103, Issue 37, 1999, Pages 7911-7919

Picosecond photoluminescence study of the n-GaAs(100)/methanol interface in a photoelectrochemical cell

Author keywords

[No Author keywords available]

Indexed keywords

CORROSION; ELECTRIC POTENTIAL; EMISSION SPECTROSCOPY; INTERFACES (MATERIALS); METHANOL; PHOTOCURRENTS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033363322     PISSN: 10895647     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp991443w     Document Type: Article
Times cited : (17)

References (38)
  • 1
    • 84934274300 scopus 로고
    • Principles and Applications of Semiconductor Photoelectrochemistry
    • Karlin, K. D., Ed.; John Wiley & Sons: New York
    • Tan, M. X.; Laibinis, P. E.; Nguyen, S. T.; Kesselman, J. M.; Stanton, C. E.; Lewis, N. S. Principles and Applications of Semiconductor Photoelectrochemistry. In Progress in Inorganic Chemistry; Karlin, K. D., Ed.; John Wiley & Sons: New York, 1994; Vol. 41, pp 21-144.
    • (1994) Progress in Inorganic Chemistry , vol.41 , pp. 21-144
    • Tan, M.X.1    Laibinis, P.E.2    Nguyen, S.T.3    Kesselman, J.M.4    Stanton, C.E.5    Lewis, N.S.6
  • 20
    • 0004055235 scopus 로고
    • Holt, Rinehart, & Winston: New York
    • Yariv, A. Optical Electronics; Holt, Rinehart, & Winston: New York, 1986.
    • (1986) Optical Electronics
    • Yariv, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.