Temperature dependence of photoluminescence in Mn-doped ZnS retrieved after the pressure-induced structural phase transition

Physica Status Solidi (A) Applied Research

Volumn 175, Issue 2, 1999, Pages 715-724

  Hanzawa, H ^a   Kobayashi, M ^a   Matsuda, O ^a   Murase, K ^a   Giriat, W ^b  

^a OSAKA UNIVERSITY   (Japan)

^b INSTITUTO VENEZOLANO DE INVESTIGACIONES CIENTÍFICAS   (Venezuela)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TRANSITIONS; INFRARED RADIATION; MANGANESE; PHASE TRANSITIONS; PHONONS; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; THERMAL EFFECTS; ZINC SULFIDE;

STRUCTURAL PHASE TRANSITIONS;

MAGNETIC SEMICONDUCTORS;

EID: 0033363293     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199910)175:2<715::AID-PSSA715>3.0.CO;2-J     Document Type: Article

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