Trapping dynamics of disilane on bare and monohydride-terminated Si(100)-2 × 1

Surface Science

Volumn 437, Issue 1, 1999, Pages

  Ferguson, B A ^a   Reeves, C T ^a   Mullins, C B ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ADSORPTION; CHEMICAL REACTIONS; CRYSTAL GROWTH; KINETIC ENERGY; MOLECULAR DYNAMICS; SILANES; SINGLE CRYSTALS; SURFACES;

BARE SURFACE; DISILANE; INITIAL TRAPPING PROBABILITY; LOW INDEX SINGLE CRYSTAL SURFACES; MONOHYDRIDE; PARALLEL MOMENTUM;

SEMICONDUCTING SILICON;

EID: 0033362890     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00716-5     Document Type: Article

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