Photoluminescence in GaAs-based quantum well structures with surface acoustic waves

Physica Status Solidi (A) Applied Research

Volumn 173, Issue 1, 1999, Pages 269-273

  Santos, P V ^a   Ramsteiner, M ^a   Jungnickel, F ^a   Hey, R ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ACOUSTIC SURFACE WAVE DEVICES; BAND STRUCTURE; CARRIER MOBILITY; ELECTRONIC PROPERTIES; EXCITONS; IONIZATION; PHOTOLUMINESCENCE; PIEZOELECTRICITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

CARRIER TRANSPORT EFFICIENCY; MICROPHOTOLUMINESCENCE QUENCHING; PHOTOGENERATED CARRIERS; SURFACE ACOUSTIC WAVES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033362781     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199905)173:1<269::AID-PSSA269>3.0.CO;2-4     Document Type: Article

References (6)

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