Buried p-gate heterojunction field effect transistor for a power amplifier of digital wireless communication systems

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1999, Pages 1095-1098

  Nakamura, Mitsuhiro ^a   Wada, Shinichi ^a   Abe, Masayoshi ^a   Kawasaki, Hidetoshi ^a   Hase, Ichiro ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; HETEROJUNCTION FIELD EFFECT TRANSISTOR; ZINC DIFFUSION TECHNIQUE;

CODE DIVISION MULTIPLE ACCESS; DIFFUSION IN SOLIDS; DIGITAL COMMUNICATION SYSTEMS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); POWER AMPLIFIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE; WIRELESS TELECOMMUNICATION SYSTEMS;

FIELD EFFECT TRANSISTORS;

EID: 0033360529     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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