Photoluminescence Studies of P-type Modulation Doped GaAs/AIGaAs Quantum Wells in the High Doping Regime

Physica Scripta T

Volumn 79, Issue , 1999, Pages 120-122

  Wongmanerod, S ^a   Holtz, P O ^a   Reginski, K ^b   Bugaiski, M ^b   Monemar, B ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; COMPOSITION EFFECTS; EMISSION SPECTROSCOPY; ENERGY GAP; EXCITONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

FERMI-EDGE SINGULARITY (FES); PHOTOLUMINESCENCE EXCITATION (PLE) SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033360250     PISSN: 02811847     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)

1. Skolnick, M. S. et al., Phys. Rev. Lett. 58, 2130 (1987).
2. Chen, W. et al., Phys. Rev. Lett. 64, 2434 (1990).
3. Chen, W., Fritze, M., Walecki, W. and Nurmikko, A. V., Phys. Rev. B45, 8464 (1992).
4. Livescu, G. E. et al., IEEE J. Quantum Electron. 24, 1677 (1988).
5. Huang, D., Chu, H. Y., Chang, Y. C., Houre, R. and Moroc, H., Phys. Rev. B38, 1246 (1988); 42, 5147 (1990).
6. Huang, D., Chu, H. Y., Chang, Y. C., Houre, R. and Moroc, H., Phys. Rev. B38, 1246 (1988); 42, 5147 (1990).
7. Harris, C. I., Monemar, B., Kalt, H. and Köhler, K., Phys. Rev. B48, 4687 (1993).
8. Ferreira, A. C. et al., Superlattices Microstructures 8, 53 (1995).