Compact, high efficiency, 120 watts GaAs power amplifier module for the 3rd generation cellular base stations

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 1999, Pages 325-328

  Morimoto, Shigeru ^a   Maeda, Masahiro ^a   Yokoyama, Takahiro ^a   Ishida, Hidetoshi ^a   Nakamura, Morio ^a   Ota, Yorito ^a   Ueda, Daisuke ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR RADIO SYSTEMS; COMBINATORIAL CIRCUITS; ELECTRIC BREAKDOWN; FREQUENCY DIVIDING CIRCUITS; GATES (TRANSISTOR); MESFET DEVICES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SILICON NITRIDE;

GALLIUM ARSENIDE POWER AMPLIFIER; WILKINSON CIRCUIT;

POWER AMPLIFIERS;

EID: 0033360218     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)