Adatom vacancies on the Si(111)-(7 × 7) surface

Surface Science

Volumn 436, Issue 1, 1999, Pages

  Wang, C Z ^a   Pan, B C ^a,b   Xiang, J B ^a   Ho, K M ^a  

^a IOWA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC DENSITY OF STATES; ELECTRONIC PROPERTIES; EVAPORATION; FERMI LEVEL; MOLECULAR DYNAMICS; POINT DEFECTS; RELAXATION PROCESSES; SURFACE STRUCTURE; SURFACE TENSION;

ADATOM VACANCIES; STRUCTURE RELAXATION; SURFACE DEFECTS; SURFACE ENERGY; TIGHT BINDING MOLECULAR DYNAMICS CALCULATION;

SEMICONDUCTING SILICON;

EID: 0033360136     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00695-0     Document Type: Article

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