High-resolution interferometry and electronic speckle pattern interferometry applied to the thermomechanical study of a MOS power transistor

Microelectronics Journal

Volumn 30, Issue 11, 1999, Pages 1125-1128

  Nassim, K ^a   Joannes, L ^a   Cornet, A ^a   Dilhaire, S ^b   Schaub, E ^b   Claeys, W ^b  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b UNIVERSITÉ DE BORDEAUX   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEFORMATION; FINITE ELEMENT METHOD; IMAGING TECHNIQUES; INTERFEROMETRY; MOIRE FRINGES; OPTICAL VARIABLES MEASUREMENT; STRAIN; STRESSES; THERMODYNAMIC STABILITY; THERMOMECHANICAL TREATMENT;

DISPLACEMENT MEASUREMENT; ELECTRONIC SPECKLE PATTERN INTERFEROMETRY; JOULE EFFECT; POWER DEVICES; POWER TRANSISTOR;

MOSFET DEVICES;

EID: 0033359327     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(99)00074-9     Document Type: Article

References (4)

1. Wykes C. Use of electronic speckle pattern interferometry (ESPI) in the measurement of static and dynamic surface displacement. Optical Engineering. 21:(3):1982;400-406.
2. Jones R., Wykes C. Holographic and Speckle interferometry. 1989;Cambridge University Press, Cambridge.
3. Claeys W., Dilhaire S., Quintard V. Laser probing of thermal behaviour of electronic components and its application in quality and reliability testing. Microelectronic Engineering. 24:1994;411-420.
4. Ishii Y., Chen J., Murata K. Digital phase-measuring interferometry with a tunable laser diode. Optical Letters. 12:1987;233-235.