Semiconductor laser array fabricated by Nd:YAG laser-induced quantum well intermixing

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3618, Issue , 1999, Pages 191-197

  Dubowski, J J ^a   Marshall, G ^a   Feng, Y ^a   Poole, P J ^a   Lacelle, C ^a   Haysom, J E ^a   Charbonneau, S ^a   Buchanan, M ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; INTEGRATED CIRCUIT LAYOUT; IRRADIATION; LASER APPLICATIONS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

BAND GAP; LASER INDUCED QUANTUM WELL INTERMIXING; PHOTONIC INTEGRATED CIRCUITS;

SEMICONDUCTOR LASERS;

EID: 0033359271     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)