Grain boundary reactive diffusion in Ni2Si thin films

Physica Status Solidi (A) Applied Research

Volumn 173, Issue 1, 1999, Pages 275-279

  Losch, W ^a   Acchar, W ^b  

^a FEDERAL UNIVERSITY OF RIO DE JANEIRO   (Brazil)

^b FEDERAL UNIVERSITY OF RIO GRANDE DO NORTE   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; FILM GROWTH; FREE ENERGY; GRAIN BOUNDARIES; LOW TEMPERATURE EFFECTS; MATHEMATICAL MODELS; METALLIC FILMS; REDUCTION; THIN FILMS;

CHEMICAL REACTION THEORY; FICK LAW; NERNST-EINSTEIN EQUATION; NICKEL SILICON ALLOYS; REACTIVE GRAIN BOUNDARY DIFFUSION COEFFICIENTS; SILICIDE FORMATION;

NICKEL ALLOYS;

EID: 0033358718     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199905)173:1<275::AID-PSSA275>3.0.CO;2-G     Document Type: Article

References (12)

1. J. BERNARDINI and P. GAS, Defect and Diffusion Forum 143/147, 1343 (1997).
2. F. M. D'HEURLE and P. GAS, J. Mater. Res. 1, 205 (1986).
3. K. N. TU, W. K. CHU, and J. W. MAYER, Thin Solid Films 25, 403 (1975).
4. J. O. OLOWOLAFE, M. A. NICOLET, and J. W. MAYER, Thin Solid Films 38, 143 (1976).
5. J. C. CHICCARIELLO, S. POIZE, and P. GAS, J. Appl. Phys. 67, 3315 (1990).
6. W. LOSCH and P. M. JARDIM, Scripta Mater. 38, 1857 (1998).
7. P. M. JARDIM, W. ACCHAR, and W. LOSCH, Appl. Surf. Sci., in press.
8. J. PHILIBERT, Appl. Surf. Sci. 53, 74 (1991).
9. H. SCHMALZRIED, Festkörperreaktionen, Verlag Chemie, Weinheim 1971.
10. A. I. BARK, B. S. BOKSTEIN, and L. M. KLINGER, J. Appl. Phys. 72, 1356 (1992).
11. M. OHRING, The Materials Science of Thin Films, Academic Press, New York 1992.
12. F. M. D'HEURLE, J. Mater. Res. 3, 167 (1988).