Investigation of response behavior in CdTe detectors versus inter-electrode charge formation position

IEEE Transactions on Nuclear Science

Volumn 46, Issue 4 PART 1, 1999, Pages 853-857

  Auricchio, N ^a   Caroli, E ^a   De Cesare, G ^a   Donati, A ^a   Dusi, W ^a   Hage Ali, M ^a   Landini, G ^a   Perillo, E ^a   Siffert, P ^a  

^a CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC FIELD EFFECTS; ELECTRODES; ELECTRON TRAPS; OPTICAL COLLIMATORS; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR COUNTERS; TUNGSTEN;

CHARGE COLLECTION EFFICIENCY; CHARGE TRAPPING/DETRAPPING; INTERELECTRODE CHARGE FORMATION POSITION;

PARTICLE DETECTORS;

EID: 0033357432     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.790691     Document Type: Article

References (12)

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